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HXG-242+: LTE Performance vs Output Power

LTE Base Station MMIC Amplifier

The HXG-242+ is a High Dynamic Range MSiP (Mini-Circuits System in Package) Amplifier designed over a focused frequency range specifically for applications which require high linear performance, advanced digital communications systems such as LTE which require excellent ACLR suppression and low EVM.

The HXG-242+ provides typically +44 dBm OIP3 which translates to high linear performance in multi-carrier and complex signal environments such as LTE supporting ACLR_1 Measurements of better than -60 dBc at +10 dBm output.

The HXG-242+ is characterized using a high peak-toaverage ratio OFDM signal used for next generation LTE within the 700MHz Downlink Band.

Figure 1 (HXG-122+ Test Board)

DUT Configuration:
Device:HXG-122+ Test board
Supply Voltage:5V, 143 mA
Temperature: 25C
Note: All data is referenced to the test board connectors

Test Signal: LTE FDD Downlink (2009-3), Full filled 64 QAM, 10MHz (50 RB) Fc = 700 MHz

Measurement Setup

Summary Data

Table 1 Data of ACLR and EVM vs. Output Power
Figure 2 ACLR Plot at Output Power of +14.09 dBm
Figure 3 EVM Plot at Output Power of +14.09 dBm